Physical and optical characterisation of Ge-implanted silica

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dc.contributor.author Dowd, Annette en_US
dc.contributor.author Llewellyn, David en_US
dc.contributor.author Elliman, Robert en_US
dc.contributor.author Luther-Davies, Barry en_US
dc.contributor.author Samoc, Marek en_US
dc.contributor.author Fitz Gerald, John en_US
dc.contributor.editor en_US
dc.date.accessioned 2010-05-28T09:42:41Z
dc.date.available 2010-05-28T09:42:41Z
dc.date.issued 2001 en_US
dc.identifier 2006008484 en_US
dc.identifier.citation Dowd Annette et al. 2001, 'Physical and optical characterisation of Ge-implanted silica', Elsevier Inc, vol. 175, pp. 637-640. en_US
dc.identifier.issn 0168-583X en_US
dc.identifier.other C1UNSUBMIT en_US
dc.identifier.uri http://hdl.handle.net/10453/8352
dc.description.abstract Ge nanocrystals formed in silica by implantation with 1.0 MeV Ge ions and subsequent annealing at 1100A?C were characterised by transmission electron microscopy and Raman spectroscopy. The nanocrystals were found to be approximately spherical in shape and to have a structure consistent with that of bulk Ge. The average size of the crystallites increased with increasing fluence and for a fluence of 1??1017 Ge cma??2 the size varied from 2.5 to 12 nm. The nonlinear optical response of the material was measured at a wavelength of 800 nm using degenerative four wave mixing and z-scan techniques. The former provided information about the magnitude and temporal response of the nonlinearity whilst the latter provided information about the operative mechanism. The magnitude of the nonlinear refractive index, |n2|, was shown to be more than three-orders of magnitude larger than that of pure silica and to have a relaxation time of the order of picoseconds. The mechanism causing this nonlinear response is shown to be absorptive and to increase with increasing implant fluence as a consequence. en_US
dc.language en_US
dc.publisher Elsevier Inc en_US
dc.relation.isbasedon en_US
dc.relation.isbasedon http://dx.doi.org/10.1016/S0168-583X(00)00536-X en_US
dc.title Physical and optical characterisation of Ge-implanted silica en_US
dc.parent Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms en_US
dc.journal.volume 175 en_US
dc.journal.number en_US
dc.publocation Amsterdam, Netherlands en_US
dc.identifier.startpage 637 en_US
dc.identifier.endpage 640 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 020500 en_US
dc.personcode 030626 en_US
dc.personcode 0000031255 en_US
dc.personcode 0000021722 en_US
dc.personcode 0000018213 en_US
dc.personcode 0000030529 en_US
dc.personcode 0000031256 en_US
dc.percentage 50 en_US
dc.classification.name Optical Physics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity en_US
dc.description.keywords Nonlinear optics; Nanocrystals; Four-wave mixing; z-scan; Ion-implantation en_US


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