Linear optical properties of Ge nanocrystals in silica

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Show simple item record Dowd, Annette en_US Elliman, Robert en_US Luther-Davies, Barry en_US
dc.contributor.editor en_US 2010-05-28T09:42:38Z 2010-05-28T09:42:38Z 2001 en_US
dc.identifier 2006008483 en_US
dc.identifier.citation Dowd Annette, Elliman Robert, and Luther-Davies Barry 2001, 'Linear optical properties of Ge nanocrystals in silica', American Institute of Physics, vol. 79, no. 15, pp. 2327-2329. en_US
dc.identifier.issn 0003-6951 en_US
dc.identifier.other C1UNSUBMIT en_US
dc.description.abstract The absorption and extinction spectra of Ge nanocrystals in silica formed by ion implantation are studied using photothermal deflection and transmission spectroscopies. It is found that scattering makes a significant contribution to the extinction spectrum, damping the spectral features and resulting in a Rayleigh scattering-like omega4 dependence. In contrast, the spectra measured by photothermal deflection clearly show features such as the E1/E1 + Delta1 transitions. The Tauc gap is extracted to be ~0.7A?0.1 eV. en_US
dc.language en_US
dc.publisher American Institute of Physics en_US
dc.relation.isbasedon en_US
dc.relation.isbasedon en_US
dc.title Linear optical properties of Ge nanocrystals in silica en_US
dc.parent Applied Physics Letters en_US
dc.journal.volume 79 en_US
dc.journal.number 15 en_US
dc.publocation Melville, USA en_US
dc.identifier.startpage 2327 en_US
dc.identifier.endpage 2329 en_US SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 020500 en_US
dc.personcode 030626 en_US
dc.personcode 0000021722 en_US
dc.personcode 0000018213 en_US
dc.percentage 50 en_US Optical Physics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US en_US
dc.location.activity en_US
dc.description.keywords nanostructured materials; elemental semiconductors; ion implantation; germanium; photothermal spectroscopy; Rayleigh scattering; optical constants; energy gap; infrared spectra; visible spectra; silicon compounds en_US

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