Direct nanoengineering and lithographic patterning of optically anisotropic thin films

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dc.contributor.author Hodgkinson, Ian en_US
dc.contributor.author Wu, Qi en_US
dc.contributor.author Arnold, Matthew en_US
dc.contributor.author Blaikie, Richard en_US
dc.contributor.editor en_US
dc.date.accessioned 2010-05-28T09:42:37Z
dc.date.available 2010-05-28T09:42:37Z
dc.date.issued 2001 en_US
dc.identifier 2006006647 en_US
dc.identifier.citation Hodgkinson Ian et al. 2001, 'Direct nanoengineering and lithographic patterning of optically anisotropic thin films', Elsevier, vol. 57-58, pp. 833-836. en_US
dc.identifier.issn 0167-9317 en_US
dc.identifier.other C1UNSUBMIT en_US
dc.identifier.uri http://hdl.handle.net/10453/8342
dc.description.abstract Biaxial and chiral thin films formed by oblique vapour deposition are patterned using standard photolithography. In one example 5 ?m wide half-wave plates are fabricated by reactive ion etching a biaxial silicon film. en_US
dc.language en_US
dc.publisher Elsevier en_US
dc.relation.isbasedon http://dx.doi.org/10.1016/S0167-9317(01)00440-3 en_US
dc.title Direct nanoengineering and lithographic patterning of optically anisotropic thin films en_US
dc.parent Microelectronic Engineering en_US
dc.journal.volume 57-58 en_US
dc.journal.number en_US
dc.publocation Amsterdam, The Netherlands en_US
dc.identifier.startpage 833 en_US
dc.identifier.endpage 836 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 020504 en_US
dc.personcode 0000030325 en_US
dc.personcode 0000030326 en_US
dc.personcode 999147 en_US
dc.personcode 0000030327 en_US
dc.percentage 100 en_US
dc.classification.name Photonics, Optoelectronics and Optical Communications en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity en_US
dc.description.keywords Birefringence; Chiral film; Lithography; Reactive ion etching; Thin film en_US


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