Chemical origin of the yellow luminescence in GaN

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dc.contributor.author Kucheyev, Sergei en_US
dc.contributor.author Toth, Milos en_US
dc.contributor.author Williams, Jim en_US
dc.contributor.author Jagadish, Chennupati en_US
dc.contributor.author Li, Gang en_US
dc.contributor.author Phillips, Matt en_US
dc.date.accessioned 2009-06-26T04:12:59Z
dc.date.available 2009-06-26T04:12:59Z
dc.date.issued 2002 en_US
dc.identifier 2004003010 en_US
dc.identifier.citation Kucheyev Sergei et al. 2002, 'Chemical origin of the yellow luminescence in GaN', American Institute of Physics, vol. 91, no. 9, pp. 5867-5874. en_US
dc.identifier.issn 0021-8979 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/776
dc.description.abstract The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex responsible for YL. In addition, C-related complexes appear to act as efficient nonradiative recombination centers. Implantation of H produces a broad luminescent peak which is slightly blueshifted with respect to the C-related YL band in the case of high excitation densities. The position of this H-related YL peak exhibits a blueshift with increasing excitation density. Based on this experimental data and results reported previously, the chemical origin of the YL band is discussed en_US
dc.publisher American Institute of Physics en_US
dc.relation.isbasedon http://dx.doi.org/10.1063/1.1467605 en_US
dc.title Chemical origin of the yellow luminescence in GaN en_US
dc.parent Journal of Applied Physics en_US
dc.journal.volume 91 en_US
dc.journal.number 9 en_US
dc.publocation New York, USA en_US
dc.identifier.startpage 5867 en_US
dc.identifier.endpage 5874 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 020400 en_US
dc.personcode 0000020143 en_US
dc.personcode 112289 en_US
dc.personcode 810070 en_US
dc.personcode 0000023564 en_US
dc.personcode 0000021305 en_US
dc.personcode 0000023565 en_US
dc.percentage 80 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.description.keywords gallium compounds, III-V semiconductors, wide band gap semiconductors, hydrogen, boron, carbon, nitrogen, oxygen, silicon, cathodoluminescence, ion implantation, nonradiative transitions, impurity-defect interactions, spectral line shift en_US


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