Abstract:
A compact, high-power emitter of half-cycle terahertz (THz) radiation is demonstrated. The device consists
of an epitaxial InAs emitter upon a GaAs prism and produces THz pulses that are 20 times more powerful
than those from conventional planar InAs emitters. This improvement is a direct result of reorienting the
transient THz dipole such that its axis is not perpendicular to the emitting surface.
