Electron imaging of dielectrics under simultaneous electron-ion irradiation

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dc.contributor.author Toth, Milos en_US
dc.contributor.author Thiel, Bradley en_US
dc.contributor.author Donald, Athene en_US
dc.contributor.author Phillips, Matt en_US
dc.date.accessioned 2009-06-26T04:12:56Z
dc.date.available 2009-06-26T04:12:56Z
dc.date.issued 2002 en_US
dc.identifier 2004003050 en_US
dc.identifier.citation Toth Milos et al. 2002, 'Electron imaging of dielectrics under simultaneous electron-ion irradiation', American Institute of Physics, vol. 91, no. 7, pp. 4479-4491. en_US
dc.identifier.issn 0021-8979 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/742
dc.description.abstract We demonstrate that if charging caused by electron irradiation of an insulator is controlled by a defocused flux of soft-landing positive ions, secondary electron (SE) images can contain contrast due to lateral variations in (i) changes in the SE yield caused by subsurface trapped charge and (ii) the SE-ion recombination rate. Both contrast mechanisms can provide information on microscopic variations in dielectric properties. We present a model of SE contrast formation that accounts for localized charging and the effects of gas ions on the SE emission process, emitted electrons above the sample surface, and subsurface trapped charge. The model explains the ion flux dependence of charge-induced SE contrast, an increase in the sensitivity to surface contrast observed in SE images of charged dielectrics, and yields procedures for identification of contrast produced by localized sample charging. en_US
dc.publisher American Institute of Physics en_US
dc.relation.isbasedon http://dx.doi.org/10.1063/1.1448875 en_US
dc.title Electron imaging of dielectrics under simultaneous electron-ion irradiation en_US
dc.parent Journal of Applied Physics en_US
dc.journal.volume 91 en_US
dc.journal.number 7 en_US
dc.publocation New York, USA en_US
dc.identifier.startpage 4479 en_US
dc.identifier.endpage 4491 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 020400 en_US
dc.personcode 112289 en_US
dc.personcode 810070 en_US
dc.personcode 0000023420 en_US
dc.personcode 0000023421 en_US
dc.percentage 80 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.description.keywords secondary electron emission, scanning electron microscopy, electron beam effects, ion beam effects, surface charging, ion recombination, dielectric properties en_US

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