X-ray spectometry investigation of electrical isolation in GaN

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dc.contributor.author Kucheyev, Sergei en_US
dc.contributor.author Toth, Milos en_US
dc.contributor.author Phillips, Matthew en_US
dc.contributor.author Williams, Jim en_US
dc.contributor.author Jagadish, Chennupati en_US
dc.contributor.author Li, Gang en_US
dc.date.accessioned 2009-06-26T04:12:55Z
dc.date.available 2009-06-26T04:12:55Z
dc.date.issued 2002 en_US
dc.identifier 2004003009 en_US
dc.identifier.citation Kucheyev Sergei et al. 2002, 'X-ray spectometry investigation of electrical isolation in GaN', American Institute of Physics, vol. 91, no. 6, pp. 3940-3942. en_US
dc.identifier.issn 0021-8979 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/719
dc.description.abstract Electrical isolation of n-type GaN epilayers bombarded with MeV light ions is studied by energy dispersive x-ray spectrometry (EDS). We show that the maximum bremsstrahlung x-ray energy (the Duane-Hunt limit) can be used to monitor the isolation process in GaN. This method allows the dose region above the threshold dose for isolation to be conveniently studied, whereas the application of conventional (low-voltage) electrical techniques in this dose range with large sheet resistances of the material (>~1011 ?/sq) is often impossible due to comparable parasitic resistances of the experimental setup. A correlation of EDS and resistance measurements of GaN strongly suggests that the magnitude of sample charging scales with the number of ion-beam-produced deep electron traps which are empty at equilibrium. The results presented demonstrate the utility of EDS as a powerful and simple technique to study electrical isolation in wide band-gap semiconductors. en_US
dc.publisher American Institute of Physics en_US
dc.relation.isbasedon http://dx.doi.org/10.1063/1.1452759 en_US
dc.title X-ray spectometry investigation of electrical isolation in GaN en_US
dc.parent Journal of Applied Physics en_US
dc.journal.volume 91 en_US
dc.journal.number 6 en_US
dc.publocation New York, USA en_US
dc.identifier.startpage 3940 en_US
dc.identifier.endpage 3942 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 020400 en_US
dc.personcode 0000020143 en_US
dc.personcode 112289 en_US
dc.personcode 810070 en_US
dc.personcode 0000023564 en_US
dc.personcode 0000021305 en_US
dc.personcode 0000023565 en_US
dc.percentage 80 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.description.keywords gallium compounds, III-V semiconductors, wide band gap semiconductors, isolation technology, semiconductor epitaxial layers, ion beam effects, X-ray chemical analysis, bremsstrahlung, deep levels, electron traps en_US


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