Abstract:
Indium nitride epilayers grown by metalorganic vapor-phase epitaxy have been studied by cathodoluminescence (CL)
spectroscopy, scanning tunneling microscopy and scanning tunneling spectroscopy (STS). A broad CL emission peak
centered at 0.8 eV was observed at 80 K. This peak was attributed to an excitonic radiative recombination mechanism as
its emission intensity exhibited a super-linear dependence on beam current with a power-law exponent of m ¼ 2: A large
spatial variation in the CL emission intensity was ascribed to the presence of threading dislocations, which act as nonradiative
recombination centers. A surface band gapof B1.4 eV was estimated from STS I2V curves.
