Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD

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Show simple item record Chen, Pu en_US Butcher, Kenneth en_US Wintrebert-Fouquet, Marie en_US Prince, K en_US Timmers, Heiko en_US Shrestha, Santosh en_US Usher, Brian en_US Wuhrer, Ric en_US Phillips, Matt en_US 2009-06-26T04:10:56Z 2009-06-26T04:10:56Z 2006 en_US
dc.identifier 2006003931 en_US
dc.identifier.citation Chen Pu et al. 2006, 'Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD', Elsevier Science Bv, vol. 288, no. 2, pp. 241-246. en_US
dc.identifier.issn 0022-0248 en_US
dc.identifier.other C1 en_US
dc.description.abstract The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-g en_US
dc.publisher Elsevier Science Bv en_US
dc.relation.isbasedon en_US
dc.title Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD en_US
dc.parent Journal Of Crystal Growth en_US
dc.journal.volume 288 en_US
dc.journal.number 2 en_US
dc.publocation Amsterdam, The Netherlands en_US
dc.identifier.startpage 241 en_US
dc.identifier.endpage 246 en_US SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 030600 en_US
dc.personcode 0000022208 en_US
dc.personcode 0000018632 en_US
dc.personcode 115917 en_US
dc.personcode 880536 en_US
dc.personcode 810070 en_US
dc.personcode 0000026434 en_US
dc.personcode 0000026240 en_US
dc.personcode 0000026241 en_US
dc.personcode 0000028159 en_US
dc.percentage 100 en_US Physical Chemistry (incl. Structural en_US
dc.classification.type FOR-08 en_US
dc.description.keywords band-gap; lattice parameters; stoichiometry; carbon; crystallinity; hydrogen; indium nitride; nitrogen-excess; oxygen en_US

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