Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy the CuSi interface

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dc.contributor.author Nixon, Kate en_US
dc.contributor.author Vos, M en_US
dc.contributor.author Bowles, C en_US
dc.contributor.author Ford, Mike en_US
dc.date.accessioned 2009-06-26T04:10:54Z
dc.date.available 2009-06-26T04:10:54Z
dc.date.issued 2006 en_US
dc.identifier 2006004075 en_US
dc.identifier.citation Nixon Kate et al. 2006, 'Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy the CuSi interface', John Wiley & Sons Ltd, vol. 38, no. 8, pp. 1236-1241. en_US
dc.identifier.issn 0142-2421 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/600
dc.description.abstract The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron mom en_US
dc.publisher John Wiley & Sons Ltd en_US
dc.relation.isbasedon http://dx.doi.org/10.1002/sia.2385 en_US
dc.title Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy the CuSi interface en_US
dc.parent Surface And Interface Analysis en_US
dc.journal.volume 38 en_US
dc.journal.number 8 en_US
dc.publocation Chichester, UK en_US
dc.identifier.startpage 1236 en_US
dc.identifier.endpage 1241 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 020400 en_US
dc.personcode 0000020211 en_US
dc.personcode 0000027869 en_US
dc.personcode 0000027870 en_US
dc.personcode 020323 en_US
dc.percentage 100 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.description.keywords copper silicide; electron momentum spectroscopy en_US
dc.staffid 020323 en_US


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