Abstract:
The Cu–Si interface was studied by electron momentum spectroscopy. A thick disordered interface is
formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity
as a function of binding energy and target electron momentum. Momentum resolution is demonstrated
to be very helpful in interpreting the data, even for these disordered interfaces. The interface layer has
a well-defined electronic structure, different from either Si or Cu, and consistent with silicide formation.
Information is obtained about the total bandwidth of the interface compound, effective Brillouin zone
size and Fermi radius. No clear differences are observed in the electronic structure of the interface layer
for Si deposited on Cu or Cu deposited on Si.
