Conduction, storage, and leakage in particle-on-SAM nanocapacitors

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dc.contributor.author Cortie, Michael en_US
dc.contributor.author Zareie, Hadi en_US
dc.contributor.author Ekanayake, Sobhath en_US
dc.contributor.author Ford, Mike en_US
dc.date.accessioned 2009-12-21T03:53:21Z
dc.date.available 2009-12-21T03:53:21Z
dc.date.issued 2005 en_US
dc.identifier 2005000654 en_US
dc.identifier.citation Cortie Michael et al. 2005, 'Conduction, storage, and leakage in particle-on-SAM nanocapacitors', IEEE-Inst Electrical Electronics Engineers Inc, vol. 4, no. 4, pp. 406-414. en_US
dc.identifier.issn 1536-125X en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/5867
dc.description.abstract Individual gold nanoparticles exhibit discrete capacitances of the order of 1 aF, and they can be tethered to a conductive substrate using a bi-functional monolayer of a suitable organic molecule. However the conduction, retention and leakage of charge b en_US
dc.publisher IEEE-Inst Electrical Electronics Engineers Inc en_US
dc.relation.hasversion Accepted manuscript version en_US
dc.relation.isbasedon http://dx.doi.org/10.1109/TNANO.2005.851286 en_US
dc.subject Dielectric films. en
dc.subject Nanotechnology. en
dc.subject Capacitance meters. en
dc.title Conduction, storage, and leakage in particle-on-SAM nanocapacitors en_US
dc.parent IEEE Transactions On Nanotechnology en_US
dc.journal.volume 4 en_US
dc.journal.number 4 en_US
dc.publocation Piscataway, USA en_US
dc.identifier.startpage 406 en_US
dc.identifier.endpage 414 en_US
dc.cauo.name INT en_US
dc.conference Verified OK en_US
dc.for 030300 en_US
dc.personcode 020302 en_US
dc.personcode 030414 en_US
dc.personcode 014903 en_US
dc.personcode 020323 en_US
dc.percentage 100 en_US
dc.classification.name Macromolecular and Materials Chemistry en_US
dc.classification.type FOR-08 en_US
dc.custom 3.176 en_US
dc.description.keywords capacitance; dielectric films; leakage currents; nanotechnology en_US
dc.staffid 020323 en_US


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