Conduction, storage, and leakage in particle-on-SAM nanocapacitors

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dc.contributor.author Zareie Hadi en_US
dc.contributor.author Ekanayake Sobhath en_US
dc.contributor.author Cortie Michael en_US
dc.contributor.author Ford Michael en_US
dc.date.accessioned 2009-12-21T03:53:21Z
dc.date.available 2009-12-21T03:53:21Z
dc.date.issued 2005 en_US
dc.identifier 2005000654 en_US
dc.identifier.citation Cortie Michael et al. 2005, 'Conduction, storage, and leakage in particle-on-SAM nanocapacitors', IEEE-Inst Electrical Electronics Engineers Inc, vol. 4, no. 4, pp. 406-414. en_US
dc.identifier.issn 1536-125X en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/5867
dc.description.abstract Individual gold nanoparticles exhibit discrete capacitances of the order of 1 aF, and they can be tethered to a conductive substrate using a bi-functional monolayer of a suitable organic molecule. However the conduction, retention and leakage of charge by such an attached “nanocapacitor” will be an important issue in any practical application of this concept. Here we investigate the electrical properties of the particles using a combination of scanning tunneling spectroscopy and numerical modeling based on equalizing Wentzel–Kramers–Brillouin style tunneling currents. Application of the model provides the voltage division across the structure, and, together, with an estimate of the capacitance of the particle, provides an indication of likely stored charge and energy and its decay. The methodology was tested with I–V data measured for an Au {111} p-xylyldithiol-Au nanoparticle system in air. About 25 eV can be stored on the nanoparticles using a charging voltage of 3 V, corresponding to up to twenty electrons. However, leakage of the charge will occur by tunneling in approximately 6x10 9 s. Therefore, these nanocapacitors would discharge completely in any electric circuit slower than about 1.5 GHz. en_US
dc.publisher Institute of Electrical and Electronics Engineers en_US
dc.relation.isbasedon http://dx.doi.org/10.1109/TNANO.2005.851286 en_US
dc.subject Dielectric films. en
dc.subject Nanotechnology. en
dc.subject Capacitance meters. en
dc.title Conduction, storage, and leakage in particle-on-SAM nanocapacitors en_US
dc.parent IEEE Transactions On Nanotechnology en_US
dc.journal.volume 4 en_US
dc.journal.number 4 en_US
dc.publocation Piscataway, USA en_US
dc.identifier.startpage 406 en_US
dc.identifier.endpage 414 en_US
dc.cauo.name INT en_US


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