Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

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dc.contributor.author Drozdowicz-Tomsia, Krystyna en_US
dc.contributor.author Goldys, Ewa en_US
dc.contributor.author Motlan, Motlan en_US
dc.contributor.author Zareie, Hadi en_US
dc.contributor.author Phillips, Matthew en_US
dc.date.accessioned 2009-06-26T04:10:32Z
dc.date.available 2009-06-26T04:10:32Z
dc.date.issued 2005 en_US
dc.identifier 2005000794 en_US
dc.identifier.citation Drozdowicz-Tomsia Krystyna et al. 2005, 'Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures', Amer Inst Physics, vol. 86, no. 17, pp. 1-3. en_US
dc.identifier.issn 0003-6951 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/457
dc.description.abstract Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescenc en_US
dc.publisher Amer Inst Physics en_US
dc.title Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures en_US
dc.parent Applied Physics Letters en_US
dc.journal.volume 86 en_US
dc.journal.number 17 en_US
dc.publocation Melville, USA en_US
dc.identifier.startpage 1 en_US
dc.identifier.endpage 3 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 020400 en_US
dc.personcode 0000024585 en_US
dc.personcode 4573 en_US
dc.personcode 0000024586 en_US
dc.personcode 030414 en_US
dc.personcode 810070 en_US
dc.percentage 70 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.custom 4.308 en_US
dc.description.keywords Molecular-Beam Epitaxy; Surface; Mocvd en_US
dc.staffid 810070 en_US


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