Growth-temperature-dependent cathodoluminescence properties of GaSb/GaAs quantum-dot multilayer structures

Abstract

Multilayer GaSb/GaAs quantum-dot sQDd structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs s100d substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence sCLd. Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C.