Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

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dc.contributor.author Coleman, Va en_US
dc.contributor.author Bradby, Jodie en_US
dc.contributor.author Jagadish, Chennupati en_US
dc.contributor.author Phillips, Matt en_US
dc.date.accessioned 2009-06-26T04:10:31Z
dc.date.available 2009-06-26T04:10:31Z
dc.date.issued 2006 en_US
dc.identifier 2006004090 en_US
dc.identifier.citation Coleman Va et al. 2006, 'Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO', Amer Inst Physics, vol. 89, no. 8, pp. 1-3. en_US
dc.identifier.issn 0003-6951 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/436
dc.description.abstract The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and de en_US
dc.publisher Amer Inst Physics en_US
dc.relation.isbasedon http://dx.doi.org/10.1063/1.2338552 en_US
dc.title Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO en_US
dc.parent Applied Physics Letters en_US
dc.journal.volume 89 en_US
dc.journal.number 8 en_US
dc.publocation Melville, USA en_US
dc.identifier.startpage 1 en_US
dc.identifier.endpage 3 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 020504 en_US
dc.personcode 0000027876 en_US
dc.personcode 0000023584 en_US
dc.personcode 0000021305 en_US
dc.personcode 810070 en_US
dc.percentage 50 en_US
dc.classification.name Photonics, Optoelectronics and Optical Communications en_US
dc.classification.type FOR-08 en_US
dc.description.keywords zinc compounds, II-VI semiconductors, wide band gap semiconductors, defect states, deep levels, indentation, excitons, radiation quenching, cathodoluminescence, crystal orientation en_US
dc.staffid 810070 en_US


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