Nanostructure fabrication by ultra-high-resolution environmental scanning electron microscopy

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Show simple item record Toth, Milos en_US Lobo, Charlene en_US Knowles, William en_US Postek, Mt en_US Vladar, Ae en_US Phillips, Matt en_US 2009-12-21T02:33:00Z 2009-12-21T02:33:00Z 2007 en_US
dc.identifier 2006011477 en_US
dc.identifier.citation Toth Milos et al. 2007, 'Nanostructure fabrication by ultra-high-resolution environmental scanning electron microscopy', Amer Chemical Soc, vol. 7, no. 2, pp. 525-530. en_US
dc.identifier.issn 1530-6984 en_US
dc.identifier.other C1 en_US
dc.description.abstract Electron beam induced deposition (EBID) is a maskless nanofabrication technique capable of surpassing the resolution limits of resist-based lithography. However, EBID fabrication of functional nanostructures is limited by beam spread in bulk substrates, substrate charging and delocalised film growth around deposits. Here, we overcome these problems by using environmental scanning electron microscopy (ESEM) to perform EBID and etching while eliminating charging artifacts at the nanoscale. Nanstructure morphology is taolored by slimming of deposits by ESEM imaging i the presence of a gaseous etch precursor and by pre-etching small features into a deposit (using a stationary or scanned electronic beam) prior to a final imaging process. The utility of this process is demonstrated by slimming of nanowires deposited by EBID, by the fabrication of gaps (between 4 and 7 nm wide) in the wires and by the removal of thin films surrounding such nanowires. ESEM imaging provides a direct view of the slimming process, yielding process resolution that is limited by ESEM image resolution (~1 nm) and surface roughening ocurring during etching. en_US
dc.publisher Amer Chemical Soc en_US
dc.relation.isbasedon en_US
dc.title Nanostructure fabrication by ultra-high-resolution environmental scanning electron microscopy en_US
dc.parent Nano Letters en_US
dc.journal.volume 7 en_US
dc.journal.number 2 en_US
dc.publocation Washington DC, USA en_US
dc.identifier.startpage 525 en_US
dc.identifier.endpage 530 en_US SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 091200 en_US
dc.personcode 112289 en_US
dc.personcode 999509 en_US
dc.personcode 0000022102 en_US
dc.personcode 810070 en_US
dc.personcode 0000032696 en_US
dc.personcode 0000032697 en_US
dc.percentage 100 en_US Materials Engineering en_US
dc.classification.type FOR-08 en_US
dc.description.keywords N/A en_US

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