A method to improve the light emission efficiency of Mg-doped GaN

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dc.contributor.author Gelhausen, Olaf en_US
dc.contributor.author Goldys, Ewa en_US
dc.contributor.author Phillips, Matt en_US
dc.date.accessioned 2009-06-26T04:10:30Z
dc.date.available 2009-06-26T04:10:30Z
dc.date.issued 2003 en_US
dc.identifier 2003001695 en_US
dc.identifier.citation Gelhausen Olaf, Phillips Matthew, and Goldys Ewa 2003, 'A method to improve the light emission efficiency of Mg-doped GaN', IOP Publishing, vol. 36, no. 23, pp. 2976-2979. en_US
dc.identifier.issn 0022-3727 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/411
dc.description.abstract Scanning cathodoluminescence (CL) spectroscopy and imaging were used to study the effect of post-growth processing on the CL efficiency of metal?organic vapour phase epitaxy-grown Mg-doped GaN. In this work, two treatments, thermal annealing in high-purity gaseous atmospheres (N2, O2 and H2(5%)/N2) and low-energy electron beam irradiation (LEEBI), have been investigated. Post-growth annealing in a H2/N2 atmosphere followed by LEEBI leads to a significant enhancement of the free electron-to-bound Mg-acceptor (e, Mg) CL emission and a reduction of nonradiative centres involving native defects. The presented results demonstrate that the combination of post-growth annealing in a H2/N2 atmosphere and LEEBI dissociation of Mg?H complex acceptors significantly improves the light emitting efficiency of Mg-doped p-type GaN. Conversely, the samples annealed in a N2 or O2 atmosphere exhibit a reduced (e, Mg) emission after both annealing and LEEBI treatment. en_US
dc.publisher IOP Publishing en_US
dc.relation.isbasedon http://dx.doi.org/10.1088/0022-3727/36/23/018 en_US
dc.title A method to improve the light emission efficiency of Mg-doped GaN en_US
dc.parent Journal of Physics D: Applied Physics en_US
dc.journal.volume 36 en_US
dc.journal.number 23 en_US
dc.publocation Bristol, UK en_US
dc.identifier.startpage 2976 en_US
dc.identifier.endpage 2979 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 020400 en_US
dc.personcode 00082661 en_US
dc.personcode 810070 en_US
dc.personcode 4573 en_US
dc.percentage 80 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.description.keywords NA en_US


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