Light Emission Properties of GaN-Based Laser Diode Structures

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Light Emission Properties of GaN-Based Laser Diode Structures

Godlewski Marek; Phillips Matthew; Czernecki R; Targowski G; Perlin Piotr; Leszczynski M; Figge Stephan; Hommel Detlef
URI: http://hdl.handle.net/10453/367
Date: 2005

Abstract:

Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.

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