Relationship between sample morphology and carrier diffusion length in GaN thin films.

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Show simple item record Godlewski, Marek en_US Goldys, Ewa en_US Bottcher, T en_US Figge, Stephan en_US Hommel, Detlef en_US Czernecki, R en_US Prystawko, P en_US Leszczynski, M en_US Perlin, Piotr en_US Wisniewski, P en_US Suski, T en_US Bockowski, M en_US Grzegory, Izabella en_US Porowski, Sylvek en_US Phillips, Matt en_US 2009-06-26T04:10:26Z 2009-06-26T04:10:26Z 2002 en_US
dc.identifier 2006009763 en_US
dc.identifier.citation Godlewski Marek et al. 2002, 'Relationship between sample morphology and carrier diffusion length in GaN thin films.', Polish Academy of Science, vol. 102, no. 4-5, pp. 627-630. en_US
dc.identifier.issn 0587-4246 en_US
dc.identifier.other C1UNSUBMIT en_US
dc.description.abstract Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations. en_US
dc.publisher Polish Academy of Science en_US
dc.title Relationship between sample morphology and carrier diffusion length in GaN thin films. en_US
dc.parent Acta Physica Polonica A en_US
dc.journal.volume 102 en_US
dc.journal.number 4-5 en_US
dc.publocation Warsaw, Poland en_US
dc.identifier.startpage 627 en_US
dc.identifier.endpage 630 en_US SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 020400 en_US
dc.personcode 0000020288 en_US
dc.personcode 4573 en_US
dc.personcode 810070 en_US
dc.personcode 0000021884 en_US
dc.personcode 0000020973 en_US
dc.personcode 0000020974 en_US
dc.personcode 0000020975 en_US
dc.personcode 0000020976 en_US
dc.personcode 0000020977 en_US
dc.personcode 0000020978 en_US
dc.personcode 0000043162 en_US
dc.personcode 0000034152 en_US
dc.personcode 0000043163 en_US
dc.personcode 0000020979 en_US
dc.personcode 0000020980 en_US
dc.percentage 80 en_US Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.description.keywords NA en_US

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