Relationship between sample morphology and carrier diffusion length in GaN thin films.

UTSePress Research/Manakin Repository

Search UTSePress Research


Advanced Search

Browse

My Account

Show simple item record

dc.contributor.author Godlewski, Marek en_US
dc.contributor.author Goldys, Ewa en_US
dc.contributor.author Bottcher, T en_US
dc.contributor.author Figge, Stephan en_US
dc.contributor.author Hommel, Detlef en_US
dc.contributor.author Czernecki, R en_US
dc.contributor.author Prystawko, P en_US
dc.contributor.author Leszczynski, M en_US
dc.contributor.author Perlin, Piotr en_US
dc.contributor.author Wisniewski, P en_US
dc.contributor.author Suski, T en_US
dc.contributor.author Bockowski, M en_US
dc.contributor.author Grzegory, Izabella en_US
dc.contributor.author Porowski, Sylvek en_US
dc.contributor.author Phillips, Matt en_US
dc.date.accessioned 2009-06-26T04:10:26Z
dc.date.available 2009-06-26T04:10:26Z
dc.date.issued 2002 en_US
dc.identifier 2006009763 en_US
dc.identifier.citation Godlewski Marek et al. 2002, 'Relationship between sample morphology and carrier diffusion length in GaN thin films.', Polish Academy of Science, vol. 102, no. 4-5, pp. 627-630. en_US
dc.identifier.issn 0587-4246 en_US
dc.identifier.other C1UNSUBMIT en_US
dc.identifier.uri http://hdl.handle.net/10453/363
dc.description.abstract Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations. en_US
dc.publisher Polish Academy of Science en_US
dc.title Relationship between sample morphology and carrier diffusion length in GaN thin films. en_US
dc.parent Acta Physica Polonica A en_US
dc.journal.volume 102 en_US
dc.journal.number 4-5 en_US
dc.publocation Warsaw, Poland en_US
dc.identifier.startpage 627 en_US
dc.identifier.endpage 630 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 020400 en_US
dc.personcode 0000020288 en_US
dc.personcode 4573 en_US
dc.personcode 810070 en_US
dc.personcode 0000021884 en_US
dc.personcode 0000020973 en_US
dc.personcode 0000020974 en_US
dc.personcode 0000020975 en_US
dc.personcode 0000020976 en_US
dc.personcode 0000020977 en_US
dc.personcode 0000020978 en_US
dc.personcode 0000043162 en_US
dc.personcode 0000034152 en_US
dc.personcode 0000043163 en_US
dc.personcode 0000020979 en_US
dc.personcode 0000020980 en_US
dc.percentage 80 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.description.keywords NA en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record