Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

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Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

Zukauskas A; Kazlauskas K; Bozek R; Lusakowska Elzbieta; Jursenas S; Miasojedovas S; Ivanov V Yu; Godlewski Marek; Bottcher T; Phillips Matthew; Hommel Detlef; Figge Stephan; Goldys Ewa

URI: http://hdl.handle.net/10453/3568

Date: 2007

Abstract:

PACS 61.72.Ss, 61.72.Vv, 68.37.Ps, 68.55.Ln, 78.60.Hk, 78.67.De Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discussed.

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