Luminescent properties of wide bandgap materials at room temperature

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Luminescent properties of wide bandgap materials at room temperature

Szmidt J; Godlewski Marek; Sokolowska A; Goldys Ewa; Werbowy A; Olszyna A; Phillips Matthew; Lusakowska Elzbieta
URI: http://hdl.handle.net/10453/3566
Date: 2007

Abstract:

PACS 68.37.Ps, 78.60.Hk, 81.05.Ea, 8I.l5.Gh Properties of nanocrystalline thin films of selected nitrides are discussed as possible buffer materials for obtaining freestanding GaN wafers. These films are grown by impulse plasma deposition on silicon substrates. We demonstrate high smoothness of these films.

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