Abstract:
We describe an approach to assess the quality of III-nitride thin films using depth-resolved
cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to
self-absorption of the near-edge CL emission is calculated using Monte Carlo simulation techniques
and compared with measured peak shift values. A discrepancy between the experimental and
modeled data indicates the presence of an exciton peak shift due to strain, near-edge defects, and
alloy fluctuation. Depth-resolved peak shift analysis of the near-edge CL from an undoped 700 nm
thick Al₀.₀₅₇Ga₀.₉₄₃N film grown on a (0001) Al₂O₃ substrate is presented to demonstrate the utility
of the method.
