Abstract:
We report the results of low-temperature photoluminescence,
room-temperature cathodoluminescence (CL) and scanning CL and electron
microscopy of self-organized CdTe/ZnTe quantum dot (QD) structure. The
in-depth profiling CL investigations were used to identify the microscopic
origin of the CL emissions observed at 2.13, 2.0-2.1 and 2.25 eV. In
particular, we distinguish between CL emissions originating from the QD
region of the structure and from the underlying buffer layers. Based on these
measurements we assign the 2.13 eV CL band to the wetting layer and the
2.0-2.1 eV band to the QD emission. From the study of the in-plane and
in-depth CL characteristics we demonstrate large in-plane fluctuations of the
CL intensity and discuss their origin.
