Quantum electrical characterisatic of nanocapacitors

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dc.contributor.author Ekanayake, Sobhath en_US
dc.contributor.author Cortie, Michael en_US
dc.contributor.author Rodanski, Ben en_US
dc.contributor.author Ford, Mike en_US
dc.contributor.editor Jagadish C en_US
dc.date.accessioned 2009-11-09T05:37:26Z
dc.date.available 2009-11-09T05:37:26Z
dc.date.issued 2003 en_US
dc.identifier 2003000961 en_US
dc.identifier.citation Ekanayake Sobhath et al. 2003, 'Quantum electrical characterisatic of nanocapacitors', IEEE, Pisacataway, USA, pp. 756-759. en_US
dc.identifier.issn 0-7803-7976-4 en_US
dc.identifier.other E1 en_US
dc.identifier.uri http://hdl.handle.net/10453/2981
dc.description.abstract Current integrated circuit miniaturization will soon require device sizes at atomic scale. Recent work has proposed many Coulomb blockade, and tunneling devices as active devices. However, among passive components, capacitors are extremely critical circuit elements in all electronic circuits with wide range applications. In this work, we present the operational criteria that will govern the feasibility of nanocapacitors for future nanoelectronic circuits. en_US
dc.publisher IEEE en_US
dc.relation.hasversion Accepted manuscript version en_US
dc.relation.isbasedon http://dx.doi.org/10.1109/NANO.2003.1231023 en_US
dc.title Quantum electrical characterisatic of nanocapacitors en_US
dc.parent 2003 Third IEEE Conference on Nanotechnology, IEEE-Nano 2003 en_US
dc.journal.volume en_US
dc.journal.number en_US
dc.publocation Pisacataway, USA en_US
dc.identifier.startpage 756 en_US
dc.identifier.endpage 759 en_US
dc.cauo.name INT en_US
dc.conference Verified OK en_US
dc.conference.location San Franscisco, USA en_US
dc.for 100700 en_US
dc.personcode 014903 en_US
dc.personcode 840102 en_US
dc.personcode 020302 en_US
dc.personcode 020323 en_US
dc.percentage 40 en_US
dc.classification.name Nanotechnology en_US
dc.classification.type FOR-08 en_US
dc.custom IEEE Conference on Nanotechnology en_US
dc.date.activity 20030812 en_US
dc.location.activity San Franscisco, USA en_US
dc.description.keywords capacitors, MIM devices, nanotechnology, tunneling en_US
dc.staffid 020323 en_US

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