Three-dimensional electron energy deposition modeling of cathodoluminescence emission near threading dislocations in gan and electron-beam lithography exposure parameters for a PMMA resist

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dc.contributor.author Demers, Hendrix en_US
dc.contributor.author Poirier-Demers, Nicolas en_US
dc.contributor.author De Jonge, Niels en_US
dc.contributor.author Drouin, Dominique en_US
dc.contributor.author Phillips, Matt en_US
dc.contributor.editor en_US
dc.date.accessioned 2014-04-03T01:22:18Z
dc.date.available 2014-04-03T01:22:18Z
dc.date.issued 2012 en_US
dc.identifier 2012001463 en_US
dc.identifier.citation Drouin, Dominique et al. 2012, 'Three-dimensional electron energy deposition modeling of cathodoluminescence emission near threading dislocations in gan and electron-beam lithography exposure parameters for a PMMA resist', Microscopy & Microanalysis, vol. 18, no. 6, pp. 1220-1228. en_US
dc.identifier.issn 1431-9276 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/22781
dc.description.abstract The Monte Carlo software CASINO has been expanded with new modules for the simulation of complex beam scanning patterns, for the simulation of cathodoluminescence (CL), and for the calculation of electron energy deposition in subregions of a three-dimens en_US
dc.language en_US
dc.publisher Cambridge Univ Press en_US
dc.relation.isbasedon http://dx.doi.org/10.1017/S1431927612013414 en_US
dc.title Three-dimensional electron energy deposition modeling of cathodoluminescence emission near threading dislocations in gan and electron-beam lithography exposure parameters for a PMMA resist en_US
dc.parent Microscopy & Microanalysis en_US
dc.journal.volume 18 en_US
dc.journal.number 6 en_US
dc.publocation New York en_US
dc.identifier.startpage 1220 en_US
dc.identifier.endpage 1228 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 020400 en_US
dc.personcode 0000090415 en_US
dc.personcode 0000090416 en_US
dc.personcode 810070 en_US
dc.personcode 0000090418 en_US
dc.personcode 0000021798 en_US
dc.percentage 50 en_US
dc.classification.name Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity en_US
dc.description.keywords MONTE-CARLO-SIMULATION; MOTT CROSS-SECTION; C-LANGUAGE; STOPPING POWER; THIN-FILMS; CASINO; CODE; MICROANALYSIS; MICROSCOPY; RESOLUTION en_US


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