Titanium-assisted growth of silica nanowires: from surface-matched to free-standing morphologies

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dc.contributor.author Callsen, Gordon en_US
dc.contributor.author Reparaz, J S en_US
dc.contributor.author Wagner, M en_US
dc.contributor.author Vierck, A. en_US
dc.contributor.author Thomsen, C en_US
dc.contributor.author Hoffmann, Axel en_US
dc.contributor.author Phillips, Matt en_US
dc.contributor.editor en_US
dc.date.accessioned 2012-10-12T03:34:07Z
dc.date.available 2012-10-12T03:34:07Z
dc.date.issued 2011 en_US
dc.identifier 2011000533 en_US
dc.identifier.citation Callsen Gordon et al. 2011, 'Titanium-assisted growth of silica nanowires: from surface-matched to free-standing morphologies', IOP Publishing Ltd, vol. 22, no. 40, pp. 405604 en_US
dc.identifier.issn 0957-4484 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/18428
dc.description.abstract We report on an oxide-assisted growth technique for silica nanowires which allows tuning the growth from surface-matched nanowires to free-standing morphologies based on growth control by Ti in the role of a catalyst and surfactant. Using an adjustable Ti concentration, we grew silica nanowires with lengths ranging from 100 nm up to several millimetres whose defect chemistry was analysed by electron microscopy tools, monochromatic cathodoluminescence imaging and time resolved photoluminescence spectroscopy. The knowledge of the luminescence properties and the related defect occurrence along with their spatial distribution is pivotal for advancing silica nanowire growth in order to realize successful device designs based on self-assembled Si/SiO(x) nanostructures. We demonstrate a core-shell structure of the grown nanowires with a highly luminescent 150 nm thick shell and outstandingly fast decaying dynamics (approximate to 1 ns) for glass-like materials. The conjunction of the observed efficient and stable luminescences with their attributed decaying behaviours suggests applications for silica nanowires such as active and passive optical interconnectors and white light phosphors. The identification of a time domain difference for the spectral regime from 2.3 to 3.3 eV, within the confined spatial dimensions of a single nanowire, is very promising for future, e. g. data transmission applications, employing silica nanowires which exhibit achievable compatibility with commonly applied silicon-based electronics. A qualitative growth model based on silica particle diffusion and Ti-assisted seed formation is developed for the various types of segregated silica nanowires which extends commonly assumed oxide-assisted growth mechanisms. en_US
dc.language en_US
dc.publisher IOP Publishing Ltd en_US
dc.title Titanium-assisted growth of silica nanowires: from surface-matched to free-standing morphologies en_US
dc.parent Nanotechnology en_US
dc.journal.volume 22 en_US
dc.journal.number 40 en_US
dc.publocation Bristol en_US
dc.identifier.startpage 1 en_US
dc.identifier.endpage en_US
dc.identifier.endpage 6 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 100706 en_US
dc.personcode 10523052 en_US
dc.personcode 0000069834 en_US
dc.personcode 0000069833 en_US
dc.personcode 0000074224 en_US
dc.personcode 810070 en_US
dc.personcode 0000072748 en_US
dc.personcode 0000022021 en_US
dc.percentage 100 en_US
dc.classification.name Nanofabrication, Growth and Self Assembly en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity en_US
dc.description.keywords Amorphous Sio2; Photoluminescence Spectroscopy; Defect Structure; Luminescence; Centers; Light; Cathodoluminescence; Excitons; Dioxide; Wires en_US


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