Bound Excitons In Zno: Structural Defect Complexes Versus Shallow Impurity Centers

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dc.contributor.author Wagner, M en_US
dc.contributor.author Callsen, Gordon en_US
dc.contributor.author Reparaz, J S en_US
dc.contributor.author Schulze, J H en_US
dc.contributor.author Kirste, R en_US
dc.contributor.author Cobet, M en_US
dc.contributor.author Ostapenko, I A en_US
dc.contributor.author Rodt, S en_US
dc.contributor.author Nenstiel, C en_US
dc.contributor.author Kaiser, M en_US
dc.contributor.author Hoffmann, Axel en_US
dc.contributor.author Rodina, A en_US
dc.contributor.author Phillips, Matthew en_US
dc.contributor.author Lautenschlager, S en_US
dc.contributor.author Eisermann, S en_US
dc.contributor.author Meyer, Bruno en_US
dc.contributor.editor en_US
dc.date.accessioned 2012-10-12T03:33:01Z
dc.date.available 2012-10-12T03:33:01Z
dc.date.issued 2011 en_US
dc.identifier 2010004642 en_US
dc.identifier.citation Wagner M et al. 2011, 'Bound Excitons In Zno: Structural Defect Complexes Versus Shallow Impurity Centers', Amer Physical Soc, vol. 84, no. 3, pp. 035313-1-0. en_US
dc.identifier.issn 1098-0121 en_US
dc.identifier.other C1 en_US
dc.identifier.uri http://hdl.handle.net/10453/17997
dc.description.abstract ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to deeply bound excitons (Y lines). In this work, we present a comprehensive study of the properties of the deeply bound excitons with particular focus on the Y(0) transition at 3.333 eV. The electronic and optical properties of these centers are compared to those of the shallow impurity related exciton binding centers (I lines). In contrast to the shallow donors in ZnO, the deeply bound exciton complexes exhibit a large discrepancy between the thermal activation energy and localization energy of the excitons and cannot be described by an effective mass approach. The different properties between the shallow and deeply bound excitons are also reflected by an exceptionally small coupling of the deep centers to the lattice phonons and a small splitting between their two electron satellite transitions. Based on a multitude of different experimental results including magnetophotoluminescence, magnetoabsorption, excitation spectroscopy (PLE), time resolved photoluminescence (TRPL), and uniaxial pressure measurements, a qualitative defect model is developed which explains all Y lines as radiative recombinations of excitons bound to extended structural defect complexes. These defect complexes introduce additional donor states in ZnO. Furthermore, the spatially localized character of the defect centers is visualized in contrast to the homogeneous distribution of shallow impurity centers by monochromatic cathodoluminescence imaging. A possible relation between the defect bound excitons and the green luminescence band in ZnO is discussed. The optical properties of the defect transitions are compared to similar luminescence lines related to defect and dislocation bound excitons in other II-VI and III-V semiconductors. en_US
dc.language en_US
dc.publisher Amer Physical Soc en_US
dc.relation.isbasedon http://dx.doi.org/10.1103/PhysRevB.84.035313 en_US
dc.title Bound Excitons In Zno: Structural Defect Complexes Versus Shallow Impurity Centers en_US
dc.parent Physical Review B en_US
dc.journal.volume 84 en_US
dc.journal.number 3 en_US
dc.publocation College Pk en_US
dc.identifier.startpage 035313-1 en_US
dc.identifier.endpage 0 en_US
dc.cauo.name SCI.Faculty of Science en_US
dc.conference Verified OK en_US
dc.for 030200 en_US
dc.personcode 0000069833 en_US
dc.personcode 10523052 en_US
dc.personcode 0000069834 en_US
dc.personcode 0000069835 en_US
dc.personcode 0000069836 en_US
dc.personcode 0000069837 en_US
dc.personcode 0000069838 en_US
dc.personcode 0000069839 en_US
dc.personcode 0000068030 en_US
dc.personcode 0000069840 en_US
dc.personcode 0000022021 en_US
dc.personcode 0000022017 en_US
dc.personcode 810070 en_US
dc.personcode 0000069841 en_US
dc.personcode 0000069842 en_US
dc.personcode 0000022025 en_US
dc.percentage 100 en_US
dc.classification.name Inorganic Chemistry en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity WOS:000293129200009 en_US
dc.description.keywords Molecular-Beam Epitaxy; Temperature-Dependence; Zinc-Oxide; Optical-Properties; Quantum-Wells; Edge-Emission; Thin-Films; Photoluminescence Lifetime; Substrate Material; Point-Defects en_US


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