Coleman V; Buda M; Tan Hark; Jagadish Chennupati; Phillips Matthew; Koike K; Sasa S; Inoue M; Yano M
(Institute of Physics Publishing, 2006)
Implantation with low-energy (80 keV) oxygen ions and subsequent rapid
thermal annealing at 800 ◦C are used to induce intermixing in a stack of 19
ZnO/Zn0.7Mg0.3O multiple quantum wells grown on sapphire by molecular
beam ...