Nonlinear Optical Response Of Ge Nanocrystals In A Silica Matrix

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dc.contributor.author Dowd, Annette en_US
dc.contributor.author Elliman, Robert en_US
dc.contributor.author Samoc, Marek en_US
dc.contributor.author Luther-Davies, Barry en_US
dc.contributor.editor en_US
dc.date.accessioned 2012-02-02T04:48:08Z
dc.date.available 2012-02-02T04:48:08Z
dc.date.issued 1999 en_US
dc.identifier 2006012899 en_US
dc.identifier.citation Dowd Annette et al. 1999, 'Nonlinear Optical Response Of Ge Nanocrystals In A Silica Matrix', Amer Inst Physics, vol. 74, no. 2, pp. 239-241. en_US
dc.identifier.issn 0003-6951 en_US
dc.identifier.other C1UNSUBMIT en_US
dc.identifier.uri http://hdl.handle.net/10453/14569
dc.description.abstract Time-resolved degenerate-four-wave-mixing measurements were used to study the nonlinear optical response (intensity-dependent refractive index! of Ge nanocrystallites embedded in a silica matrix. Nanocrystals were fabricated by ion-implanting silica with en_US
dc.language en_US
dc.publisher Amer Inst Physics en_US
dc.relation.isbasedon en_US
dc.relation.isbasedon http://dx.doi.org/10.1063/1.123267 en_US
dc.title Nonlinear Optical Response Of Ge Nanocrystals In A Silica Matrix en_US
dc.parent Applied Physics Letters en_US
dc.journal.volume 74 en_US
dc.journal.number 2 en_US
dc.publocation Woodbury en_US
dc.identifier.startpage 239 en_US
dc.identifier.endpage 241 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 020500 en_US
dc.personcode 030626 en_US
dc.personcode 0000021722 en_US
dc.personcode 0000030529 en_US
dc.personcode 0000018213 en_US
dc.percentage 50 en_US
dc.classification.name Optical Physics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity ISI:000077942400027 en_US
dc.description.keywords Thin-films; Mechanism; Si; Photoluminescence; Susceptibility; Deposition; Emission en_US


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