Nonlinear Optical Properties Of Semiconducting Nanocrystals In Fused Silica

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dc.contributor.author Dowd, Annette en_US
dc.contributor.author Samoc, Marek en_US
dc.contributor.author Luther-Davies, Barry en_US
dc.contributor.author Elliman, Robert en_US
dc.contributor.editor en_US
dc.date.accessioned 2012-02-02T04:46:37Z
dc.date.available 2012-02-02T04:46:37Z
dc.date.issued 1999 en_US
dc.identifier 2006012898 en_US
dc.identifier.citation Dowd Annette et al. 1999, 'Nonlinear Optical Properties Of Semiconducting Nanocrystals In Fused Silica', Elsevier Science Bv, vol. 148, no. 1-4, pp. 964-968. en_US
dc.identifier.issn 0168-583X en_US
dc.identifier.other C1UNSUBMIT en_US
dc.identifier.uri http://hdl.handle.net/10453/14566
dc.description.abstract Degenerate four-wave mixing (DFWM) is used to examine the nonlinear optical response of Ge nanocrystals in a silica matrix. The nanocrystals are formed by implanting 1.0 MeV Ge ions into silica to a dose of 3.0x10(17) Ge cm(-2) and annealing at 1100 degr en_US
dc.language en_US
dc.publisher Elsevier Science Bv en_US
dc.relation.isbasedon en_US
dc.relation.isbasedon http://dx.doi.org/10.1016/S0168-583X(98)00886-6 en_US
dc.title Nonlinear Optical Properties Of Semiconducting Nanocrystals In Fused Silica en_US
dc.parent Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms en_US
dc.journal.volume 148 en_US
dc.journal.number 1-4 en_US
dc.publocation Amsterdam en_US
dc.identifier.startpage 964 en_US
dc.identifier.endpage 968 en_US
dc.cauo.name SCI.Physics and Advanced Materials en_US
dc.conference Verified OK en_US
dc.for 020500 en_US
dc.personcode 030626 en_US
dc.personcode 0000030529 en_US
dc.personcode 0000018213 en_US
dc.personcode 0000021722 en_US
dc.percentage 50 en_US
dc.classification.name Optical Physics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom en_US
dc.date.activity en_US
dc.location.activity ISI:000078575700180 en_US
dc.description.keywords Thin-films en_US


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