Characterisation Of Sos-Cmos Fets At Low Temperatures For The Design Of Integrated Circuits For Quantum Bit Control And Readout

Abstract

We have assessed the use of commercial silicon-on-sapphire CMOS electronics in control circuits, which could be used to interface with quantum bits at low temperatures. We have characterized n-type MOSFETs, p-type MOSFETs, and an n(+)-diffusion resistor