Cathodoluminescence as a method of extracting detailed information from nanophotonics systems: a study of silicon nanocrystals
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| dc.contributor.author | Phillips Matthew | en_US |
| dc.contributor.author | Ton-That Cuong | en_US |
| dc.contributor.author | Dowd Annette | en_US |
| dc.contributor.author | Armstrong Nicholas | en_US |
| dc.contributor.author | Johansson Birger | en_US |
| dc.contributor.editor | Abbott, D; Kivshar, YS; RubinszteinDunlop, HH; Fan, S | en_US |
| dc.date.accessioned | 2010-06-16T04:59:28Z | |
| dc.date.available | 2010-06-16T04:59:28Z | |
| dc.date.issued | 2006 | en_US |
| dc.identifier | 2006004203 | en_US |
| dc.identifier.citation | Dowd Annette et al. 2006, 'Cathodoluminescence as a method of extracting detailed information from nanophotonics systems: a study of silicon nanocrystals', SPIE-Int Society Optical Engineering, Bellingham, USA, pp. J380-1-J380-10. | en_US |
| dc.identifier.issn | 0-8194-6069-9 | en_US |
| dc.identifier.other | E1 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10453/11873 | |
| dc.description.abstract | We investigated Si nanocaystal samples produced by high dose 600 keV Si+ implantation of fused silica and annealing using cathodoluminescence (CL). CL spectra collected under 5-25 keV electron irradiation show similar features to reported photoluminescence | en_US |
| dc.language | en_US | |
| dc.publisher | SPIE-Int Society Optical Engineering | en_US |
| dc.relation.isbasedon | http://dx.doi.org/10.1117/12.638662 | en_US |
| dc.rights | Copyright 2006. Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. | en_US |
| dc.title | Cathodoluminescence as a method of extracting detailed information from nanophotonics systems: a study of silicon nanocrystals | en_US |
| dc.parent | Photonics: Design, Technology, And Packaging Ii | en_US |
| dc.journal.volume | 6038 | en_US |
| dc.journal.number | en_US | |
| dc.publocation | Bellingham, USA | en_US |
| dc.identifier.startpage | J380-1 | en_US |
| dc.identifier.endpage | J380-10 | en_US |
| dc.cauo.name | SCI.Physics and Advanced Materials | en_US |
| dc.conference | Verified OK | en_US |
| dc.for | 020400 | en_US |
| dc.personcode | 103435;030626;031010;810070;921034 | en_US |
| dc.percentage | 000080 | en_US |
| dc.classification.name | Condensed Matter Physics | en_US |
| dc.classification.type | FOR-08 | en_US |
| dc.edition | en_US | |
| dc.custom | Conference on Microelectronics - Design, Technology and Packaging II | en_US |
| dc.date.activity | 20051212 | en_US |
| dc.location.activity | Brisbane, Australia | en_US |
| dc.description.keywords | cathodoluminescence, silicon, nanostructures, maximum entropy, inverse problem | en_US |
| dc.staffid | Lund University | en_US |
