SEM characterisation of nanodevices and nanomaterials

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Show simple item record Drouin, Dominique en_US Pauc, N en_US Poissant, Patrick en_US Delample, Vincent en_US Souifi, Albert en_US Phillips, Matt en_US
dc.contributor.editor Jagadish C, Max Lu GQ en_US 2010-05-28T09:58:31Z 2010-05-28T09:58:31Z 2006 en_US
dc.identifier 2006005793 en_US
dc.identifier.citation Drouin Dominique et al. 2006, 'SEM characterisation of nanodevices and nanomaterials', IEEE, USA, pp. 596-599. en_US
dc.identifier.issn 1-4244-0453 en_US
dc.identifier.other E1 en_US
dc.description.abstract The scanning electron microsope (SEM) cna be used to study and characterise a wide variety of materials used in nanoelectronic and photonic applications. Several different techniques make use of this versatile tool. These include voltage conrtast in secondary electron imaging, charge colletion for semiconductor samples and cathodoluminescnece. These techniques are important in device nanofabrication process development and nanomaterials characterisation. en_US
dc.language en_US
dc.publisher IEEE en_US
dc.relation.isbasedon en_US
dc.title SEM characterisation of nanodevices and nanomaterials en_US
dc.parent Proceedings of the 2006 International Conference on Nanosacience and Nanotechnology en_US
dc.journal.volume en_US
dc.journal.number en_US
dc.publocation USA en_US
dc.identifier.startpage 596 en_US
dc.identifier.endpage 599 en_US INT en_US
dc.conference Verified OK en_US
dc.for 100700 en_US
dc.personcode 0000021798 en_US
dc.personcode 0000028546 en_US
dc.personcode 810070 en_US
dc.personcode 0000029713 en_US
dc.personcode 0000029714 en_US
dc.personcode 0000029715 en_US
dc.percentage 100 en_US Condensed Matter Physics en_US
dc.classification.type FOR-08 en_US
dc.edition en_US
dc.custom International Confrence on Nanoscience and Nanotechnology en_US 20060703 en_US
dc.location.activity Brisbane QLD Australia en_US
dc.description.keywords single electron transistor, GaN voltage contrast, cathodoluminescence, charge collection, SEm en_US

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