Browsing by Author "Leszczynski, M"

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Browsing by Author "Leszczynski, M"

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  • Godlewski, M; Ivanov, V Yu; Goldys, Ewa; Phillips, Matthew; Bottcher, T; Figge, Stephan; Hommel, Detlef; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, Piotr; Grzegory, Izabella; Porowski, Sylvek (Polish Academy of Science Istitute of Physics, 2003)
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  • Godlewski, Marek; Lusakowska, Elzbieta; Goldys, Ewa; Phillips, Matthew; Bottcher, T; Figge, Stephan; Hommel, Detlef; Leszczynski, M; Grzegory, Izabella; Porowski, Sylvek (Elsevier, 2004)
    We demonstrate a correlation between the microsturcture of epilayers and the diffusion length of free carriers and excitons in heteroepitaxial and homeopitaxial GaN films. We show that the diffusion length is shorter than ...
  • Godlewski, Marek; Goldys, Ewa; Phillips, Matthew; Bottcher, T; Figge, Stephan; Hommel, Detlef; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, Piotr; Grzegory, Izabella; Porowski, Sylvek (Wiley-V C H Verlag Gmbh, 2004)
  • Godlewski, Marek; Phillips, Matthew; Czernecki, R; Targowski, G; Perlin, Piotr; Leszczynski, M; Figge, Stephan; Hommel, Detlef (Polish Academy of Sciences, 2005)
    Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and ...
  • Godlewski, Marek; Phillips, Matthew; Kazlauskas, K; Czernecki, R; Targowski, G; Perlin, Piotr; Leszczynski, M; Figge, Stephan; Hommel, Detlef (Wiley, 2006)
    Cathodoluminescence is applied for eveluation of in-plane variations of light emission from gaN-based laser diode structures. We demonstrate that potential fluctuations affect significantly emission of laser diodes for ...
  • Godlewski, Marek; Goldys, Ewa; Phillips, Matthew; Bottcher, T; Figge, Stephan; Hommel, Detlef; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, Piotr; Wisniewski, P; Suski, T; Bockowski, M; Grzegory, Izabella; Porowski, Sylvek (Polish Academy of Science, 2002)
    Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain ...