Browsing by Author "Jagadish Chennupati"

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Browsing by Author "Jagadish Chennupati"

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  • Cathodoluminescnece Depth Profiling of Ion-Implanted GaN 
    Phillips Matthew; Kucheyev Sergei; Williams Jim; Toth Milos; Jagadish Chennupati; Li Gang (American Institute of Physics, 2001)
    Cathodoluminescence (CL) spectroscopy shows that even relatively low-dose keY light-ion bombardment (corresponding to the generation of ~ 5 X 1019 vacancies/crrr') of wurtzite GaN results in a dramatic quenching of visible ...
  • Chemical origin of the yellow luminescence in GaN 
    Kucheyev Sergei; Toth Milos; Phillips Matthew; Williams Jim; Jagadish Chennupati; Li Gang (American Institute of Physics, 2002)
    The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results ...
  • Contactinduced defect propagation in ZnO 
    Bradby Jodie; Kucheyev Sergei; Williams Jim; Jagadish Chennupati; Swain Michael; Munroe Paul; Phillips Matthew (American Institute of Physics, 2002)
    Contact-induced damage has been studied in single-crystal (wurtzite) ZnO by cross-sectional transmission electron microscopy (XTEM) and scanning cathodoluminescence (CL) monochromatic imaging. XTEM reveals that the prime ...
  • Controlling the properties of InGaAs quantum dots by selective-area epitaxy 
    Mokkapati Sudha; Lever Penelope; Tan Hark; Jagadish Chennupati; Mcbean Katie; Phillips Matthew (American Institute of Physics, 2005)
    Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence ...
  • Effects of Excitation Density on Cathodoluminescence from GaN 
    Phillips Matthew; Kucheyev Sergei; Williams Jim; Toth Milos; Jagadish Chennupati; Li Gang (American Institute of Physics, 2001)
    Wurtzite GaN epilayers are studied by cathodoluminescence (CL) spectroscopy. Results show that the intensities of donor-acceptor pair (DAP) and yellow luminescence (YL) peaks sublinearly depend on excitation density, ...
  • Integration of quantum dot devices by selective area epitaxy 
    Tan Hark; Jagadish Chennupati; Mokhapati S; Mcbean Katie; Phillips Matthew (The Institute of Electrical and Electronic Engineers Inc (IEEE), 2006)
    The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By prepatterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over ...
  • Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing 
    Coleman V; Buda M; Tan Hark; Jagadish Chennupati; Phillips Matthew; Koike K; Sasa S; Inoue M; Yano M (Institute of Physics Publishing, 2006)
    Implantation with low-energy (80 keV) oxygen ions and subsequent rapid thermal annealing at 800 ◦C are used to induce intermixing in a stack of 19 ZnO/Zn0.7Mg0.3O multiple quantum wells grown on sapphire by molecular beam ...
  • Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO 
    Bradby Jodie; Jagadish Chennupati; Coleman Va; Phillips Matthew (American Institute of Physics, 2006)
    The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is ...
  • Tuning the bandgap of InAs quantum dots by selective-area MOCVD 
    Mokkapati Sudha; Wong-Leung Jennifer; Tan Hark; Jagadish Chennupati; Mcbean Katie; Phillips Matthew (IOP Publishing Ltd, 2008)
    In-plane bandgap energy control of InAs quantum dots (QDs) grown on GaAs substrates is demonstrated using selective-area epitaxy. Transmission electron microscopy and cathodoluminescence are used for characterization of ...
  • X-ray spectrometry investigation of electrical isolation in GaN 
    Kucheyev Sergei; Toth Milos; Phillips Matthew; Williams Jim; Jagadish Chennupati; Li Gang (American Institute of Physics, 2002)
    Electrical isolation of n-type GaN epilayers bombarded with MeV light ions is studied by energy dispersive x-ray spectrometry (EDS). We show that the maximum bremsstrahlung x-ray energy (the Duane–Hunt limit) can be used ...