Dowd Annette; Llewellyn David; Elliman Robert; Luther-Davies Barry; Samoc Marek; Fitz Gerald John
(Elsevier Inc, 2001)
Ge nanocrystals formed in silica by implantation with 1.0 MeV Ge ions and subsequent annealing at 1100°C were characterised by transmission electron microscopy and Raman spectroscopy. The nanocrystals were found to be ...